copyright@ semipower electronic technology co., ltd. all rights reserved. features high ruggedness r ds( on ) (max 15 ? )@v gs =10v gate charge (max 6 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. this power mosfet is usually used at ac adaptors and smps. n - channel mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 0.5 a continuous drain current (@t c =100 o c) 0.3 a i dm drain current pulsed (note 1) 2.0 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 52 mj e ar repetitive avalanche energy (note 1) 0.3 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation (@t c =25 o c) 3 w derating factor above 25 o c 0.023 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 260 o c thermal characteristics symbol parameter value unit r thcs thermal resistance, junction to lead max 40 o c/w r thja thermal resistance, junction to ambient 120 o c /w mar. 2011. rev. 2.0 1/7 bv dss : 600v i d : 0.5a r ds(on) : 15ohm 1 2 3 sw1n60a samwin 1. gate 2. drain 3. source 1 2 3 to - 92 item sales type marking package packaging 1 sw c 1n60a sw1n60a to - 92 tape order codes
copyright@ semipower electronic technology co., ltd. all rights reserved. electrical characteristic ( t c = 25 o c unless otherwise specified symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 - - v i dss drain to source leakage current v ds =600v, v gs =0v - - 1 ua v ds =480v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =50ua 3.0 - 4.5 v r ds(on) drain to source on state resistance v gs =10v, i d = 0.4a 9.5 15 ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz - 120 150 pf c oss output capacitance - 18 25 c rss reverse transfer capacitance - 4 6 t d(on) turn on delay time v ds =300v, i d =0.5a, r g =25? - 15 35 ns tr rising time - 75 140 t d(off) turn off delay time - 30 60 t f fall time - 35 60 q g total gate charge v ds =480v, v gs =10v, i d =0.5a - 7 9 nc q gs gate - source charge - 1.3 - q gd gate - drain charge - 2.4 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 0.5 a i sm pulsed source current - - 2.0 a v sd diode forward voltage drop. i s = 0.8 a, v gs =0v - - 1.5 v t rr reverse recovery time i s = 0.5 a, v gs =0v, di f /dt=100a/us - 150 - ns q rr breakdown voltage temperature - 0.44 - uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 95mh, i as = 0.5a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 0.5a, di/dt = 300a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. sw1n60a samwin 2/7
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 1. on - state characteristics fig. 2. transfer characteristics fig. 3. on - resistance variation vs. drain current and gate voltage fig. 5. capacitance characteristics (non - repetitive) fig. 6. gate charge characteristics fig. 4. on state current vs. diode forward voltage 3/7 sw1n60a samwin 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. 250s pulse test 2. t c = 25 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v i d , drain current [a] v ds , drain-source voltage [v] 2 4 6 8 10 10 -1 10 0 150 o c 25 o c -55 o c notes : 1. v ds = 50v 2. 250s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 v gs = 20v v gs = 10v ? ? n o t e : t j = 2 5 ? ? r ds(on) , d r a i n - s o u r c e o n - r e s i s t a n c e [ ? ] i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 1 5 0 ? ? ? ? n o t e s : 1. v gs = 0v 2 . 2 5 0 ? s p u l s e t e s t 2 5 ? ? i dr , reverse drain current [a] v sd , source-drain voltage [v]
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 9. maximum drain current vs. case temperature. fig. 8. on resistance variation vs. junction temperature fig. 10. maximum safe operating area fig. 11. transient thermal response curve fig 7. breakdown voltage variation vs. junction temperature sw1n60a samwin 4/7 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 t c' case temperature [ o c] i d' drain current [a] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? ? n o t e s : 1. v gs = 10 v 2. i d = 0.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 dc 10 ms 1 ms 100 ? s operation in this area is limited by r ds(on) ? ? n o t e s : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? ? n o t e s : 1. v gs = 0 v 2. i d = 2 5 0 ? a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 ? ? n o t e s : 1. z jc ( t ) = 4 . 2 ? ? / w m a x . 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec]
copyright@ semipower electronic technology co., ltd. all rights reserved. v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge v dd dut v ds r l r g 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f v dd dut v ds l r g 10v in i as t p time i d(t) bv dss i as v ds(t) eas = l x i as 2 x bv dss - v dd bv dss 2 1 fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform 5/7 sw1n60a samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd sw1n60a samwin 6/7
copyright@ semipower electronic technology co., ltd. all rights reserved. sw1n60a samwin revision history revision no. changed characteristics responsible date issuer rev 1.0 origination, first release alice nie 2007.12.05 xzq rev 2.0 updated the format of datasheet and added order codes. alice nie 2011.03.24 xzq ????? ? ? 25 ? mf6 029 - 88253717 029 - 88251977 ????? ??? a 2005 0755 - 83981818 0755 - 83476838 www.semipower.com.cn 7/7
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